to-220f plastic-encapsulate mosfets CJPF04N80 n-channel power mosfet general description this is a n-channel m ode power mosfet using advanced technology to provide planar stripe and dmos technology. this technology is specialized in allowi ng a minimum on-state resistance, and superior switching performance. it also can withstand high energy pulse in the avalanche and commu tation mode. it is universally applied in high efficiency switch mode power supply. feature z high current rating z lower r ds(on) z lower capacitance z lower total gate charge z avalanche energy specified z high switching speed maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 800 gate-source voltage v gs 30 v continuous drain current i d 4.0 pulsed drain current i dm 16 a single pulsed avalanche energy (note1) e as 170 mj thermal resistance from junction to ambient r ja 62.5 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 maximum lead temperature for soldering purposes , 1/8?from case for 5 seconds t l 260 to-220f 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-2,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 800 v zero gate voltage drain current i dss v ds =800v, v gs =0v 10 a gate-body leakage current (note2) i gss v ds =0v, v gs = 30v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 3 5 v static drain-source on-resistance r ds(on) v gs =10v, i d =2.0a 3.0 ? dynamic characteristics (note 3) input capacitance c iss 880 output capacitance c oss 100 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 12 pf switching characteristics (note 2,3) total gate charge q g 25 gate-source charge q gs 4.2 gate-drain charge q gd v ds =640v,v gs =10v,i d =4.0a 9.1 nc turn-on delay time t d (on) 40 turn-on rise time t r 100 turn-off delay time t d(off) 80 turn-off fall time t f v dd =400v, v gs =10v, r g =25 ? , i d =4.0a 80 ns sourceource-drain diode characteristics maximum diode forward continuous current i s 4 a maximum diode forward pulse current i sm 16 a diode forward voltage v sd i s =4a,v gs =0v 1.4 v notes : 1. l=20mh, i l =4 a, v dd =50v, v gs =10v,r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-2,dec,2013
0 6 12 18 24 30 0 1 2 3 4 5 6 01234567 0.0 0.5 1.0 12345 0 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 4 6 8 10 12 0 2 4 6 8 10 12 25 50 75 100 125 3.0 3.5 4.0 4.5 5.0 pulsed v gs = 6.5v 7v 8, 10v v gs =6v output characteristics v gs =5.5v drain current i d (a) drain to source voltage v ds (v) v ds =10v pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =100 t a =25 6 0.1 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 CJPF04N80 pulsed i d =2a on-resistance r ds(on) ( ) gate to source voltage v gs (v) v gs ?? r ds(on) t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-2,dec,2013
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